Renormalized energies of superfluorescent bursts from an electron-hole magnetoplasma with high gain in InxGa1−xAs quantum wells

Study of Shubnikov–de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1 XSb quantum wells

InXGa1 XSb has the highest hole mobility amongst all III–V semiconductors which can be enhanced further with the use of strain. The use of confinement and strain in InXGa1 XSb quantum wells lifts the degeneracy between the light and heavy hole bands which leads to reduction in the hole effective mass in the lowest occupied band and an increase in the mobility. We present magnetotransport measur...

Giant superfluorescent bursts from a semiconductor magneto-plasma

Superradiance—the cooperative decay of excited dipoles—has recently been discussed in a diverse range of contexts in which coherent coupling of constituent particles governs their cooperative dynamics: cavity quantum electrodynamics, quantum phase transitions and plasmonics. Here we observe intense, delayed bursts of coherent radiation from a photo-excited semiconductor and interpret it as supe...

Phase stability and the arsenic vacancy defect in In x Ga 1 − x As

The introduction of defects, such as vacancies, into InxGa1−xAs can have a dramatic impact on the physical and electronic properties of the material. Here we employ ab initio simulations of quasirandom supercells to investigate the structure of InxGa1−xAs and then examine the energy and volume changes associated with the introduction of an arsenic vacancy defect. We predict that both defect ene...

Imaging of thickness and compositional fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy

We have used scanning capacitance microscopy SCM and atomic force microscopy AFM to characterize structural and electronic properties of InxGa1−xN/GaN quantum-well structures at the nanoscale. Macroscopic capacitance-voltage measurements combined with numerical simulations indicate that either electron or hole accumulation in the quantum-well layer can be induced by application of forward or re...

Well-width dependence of exciton-phonon scattering in InxGa1 - xAs/GaAs single quantum wells